14:00 〜 14:15

[O-1-02] First Principles Study of the effect of Hydrogen Annealing effects on SiC MOSFETs

^○K. Chokawa¹, K. Shiraishi¹ (1.Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2017.O-1-02