14:45 〜 15:00

[O-1-05] Hole Trapping in SiC-MOS Devices Evaluated by Fast- CV Method

^○M. Hayashi^1,2, M. Sometani¹, T. Hatakeyama¹, H. Yano³, S. Harada¹ (1.AIST (Japan), 2.DENSO Corp. (Japan), 3.Univ. of Tsukuba (Japan))

https://doi.org/10.7567/SSDM.2017.O-1-05