Effect of Surface Roughness of Trench Sidewalls on Channel Mobility in 4H-SiC Trench MOSFETs

K. Kutsuki

doi:https://doi.org/10.7567/SSDM.2017.O-1-06

15:00 〜 15:15

[O-1-06 (Late News)] Effect of Surface Roughness of Trench Sidewalls on Channel Mobility in 4H-SiC Trench MOSFETs

^○K. Kutsuki¹, Y. Murakami¹, Y. Watanabe², T. Onishi¹, K. Yamamoto³, H. Fujiwara¹, T. Ito¹ (1.Toyota Motor Corp. (Japan), 2.Toyota Central R&D Labs. Inc. (Japan), 3.DENSO Corp. (Japan))

https://doi.org/10.7567/SSDM.2017.O-1-06

2017 International Conference on Solid State Devices and Materials

[O-1-06 (Late News)] Effect of Surface Roughness of Trench Sidewalls on Channel Mobility in 4H-SiC Trench MOSFETs