[PS-4-03] Role of Al₂O₃ Thin Layer to Improve The Switching Properties in Ta₅Si₃ Based CBRAM Device

^○D. Kumar¹, R. Aluguri¹, U. Chand¹, S. Chandrasekaran¹, T. -Y. Tseng¹ (1.National Chiao Tung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2017.PS-4-03