[PS-4-14] Investigation of bias polarity dependence on set operation in phase change memory using GeCu₂Te₃

^○J. An¹, K. Kim¹, C. Choi¹, S. Shindo², Y. Sutou², Y. Song¹ (1.Hanyang Univ. (Korea), 2.Tohoku Univ. (Japan))

https://doi.org/10.7567/SSDM.2017.PS-4-14