[PS-6-08] Improved Electrical Stability of Thin-Film Transistors with Co-sputtered Ti-IGZO Channel and Zr_0.85Si_0.15O₂ Gate Dielectric

H. -P. Yan¹,^○ Z. -K. Zhuang¹ (1.National Cheng Kung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2017.PS-6-08