[PS-6-09] An improved normally-off Al₂O₃/GaN MOSFET based on self-terminating gate-recess etching technique

^○H. Wang¹, J. Wang¹, J. Liu¹, M. Yu¹, B. Xie¹, W. Wu¹ (1.Peking Univ. (China))

https://doi.org/10.7567/SSDM.2017.PS-6-09