[PS-6-12] Transient-mode Simulation of MOS C-V Characteristics for GaN

^○K. Fukuda¹, H. Asai¹, J. Hattori¹, M. Shimizu¹, T. Hashizume² (1.AIST (Japan), 2.Hokkaido Univ. (Japan))

https://doi.org/10.7567/SSDM.2017.PS-6-12