11:39 〜 11:41

[PS-1-03] First Study of High-Ge-Content Si_0.16Ge_0.84 Gate Stack by Low Pressure Oxidation

^○J. -L. Zhang¹, W. -L. Lee¹, M. -L. Tsai¹, G. -L. Luo², C. -H. Chien¹ (1.National Chiao Tung Univ. (Taiwan), 2.National Nano Device Labs. (Taiwan))