11:43 AM - 11:45 AM
[PS-1-05] Effect of High Pressure Annealing on the Reliability of FDSOI Tunneling FET
○S. C. Kang1, D. Lim2, S. K. Lim1, J. Noh1, S. -M. Kim1, S. K. Lee1, C. Choi2, B. H. Lee1
(1.Gwangju Inst. of Sci. and Tech. (Korea), 2.Hanyang Univ. (Korea))