11:51 〜 11:53

[PS-14-09 (Late News)] Evaluation of Hall Effect Mobility for SiC MOSFETs with Increasing Nitrogen Implantation into Channel Region

^○M. Noguchi¹, T. Iwamatsu¹, H. Amishiro¹, H. Watanabe¹, K. Kita², S. Yamakawa¹ (1.Mitsubishi Electric Corp. (Japan), 2.Univ. of Tokyo (Japan))