11:59 〜 12:01 [PS-3-13 (Late News)] Hot-carrier Induced Drastic Off-state Leakage Current Degradation in STI-based N-channel LDMOS ○K. Takahashi1, K. Komatsu1, T. Sakamoto1, K. Kimura1, F. Matsuoka1 (1.Toshiba Electronic Devices & Storage Corp. (Japan))
