11:39 〜 11:41 [PS-4-03] Role of Al2O3 Thin Layer to Improve The Switching Properties in Ta5Si3 Based CBRAM Device ○D. Kumar1, R. Aluguri1, U. Chand1, S. Chandrasekaran1, T. -Y. Tseng1 (1.National Chiao Tung Univ. (Taiwan))
