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[A-1-04] Nearly ideal spin tunneling efficiency by lowering the trap density at an amorphous-MgO / n⁺-Si(001) interface with a SiO _x insertion layer

^○M. Ichihara¹, S. Sato¹, M. Tanaka¹, R. Nakane¹ (1.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2018.A-1-04