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[A-3-05] Room Temperature High Peak-to-valley Current Ratio of CaF₂/Si Triple-barrier Resonant-tunneling Diode Grown on Si

^○H. Tonegawa¹, Y. Kumagai¹, S. Fukuyama¹, K. Hirose¹, M. Watanabe¹ (1.Tokyo Tech (Japan))

https://doi.org/10.7567/SSDM.2018.A-3-05