New Development and characterization of Oxide-based Selector for Cross-Point 25-nm ReRAM

S.G. Kim

doi:https://doi.org/10.7567/SSDM.2018.B-2-01

15:30 〜 16:00

[B-2-01 (Invited)] New Development and characterization of Oxide-based Selector for Cross-Point 25-nm ReRAM

^○S.G. Kim¹, J.C. Lee¹, T.J. Ha¹, J.H. Lee¹, J.Y. Lee¹, Y.T. Park¹, K.W. Kim¹, W.K. Ju¹, Y.S. Ko¹, H.M. Hwang¹, B.M. Lee¹, J.Y. Moon¹, W.Y. Park¹, B.G. Gyun¹, B.-K. Lee¹, J.K. Kim¹ (1.SK hynix Inc. (Korea))

https://doi.org/10.7567/SSDM.2018.B-2-01

2018 International Conference on Solid State Devices and Materials

[B-2-01 (Invited)] New Development and characterization of Oxide-based Selector for Cross-Point 25-nm ReRAM