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[B-5-03] Strong Impacts of Top Blocking Layer on Initial Flatband Voltage in Hf-based High-k Charge-Trapping Memory

^○M. Kadoshima¹, M. Inoue¹, T. Maruyama¹, M. Matsuura¹ (1.Renesas Electronics Corp. (Japan))

https://doi.org/10.7567/SSDM.2018.B-5-03