The Japan Society of Applied Physics

14:30 〜 14:45

[B-5-05] A Study of Impact of Incorporating Locations of Yttrium on the Properties of GeOx/HfO2-based/TiN Gate Stack Based on Material Reaction

C.H. Chou1, Y.H. Lu1, Y.H. Tsai1, A.S. Shih1, W.K. Yeh2, C.H. Chien1 (1.National Chiao Tung Univ. (Taiwan), 2.National Nano Device Labs. (Taiwan))

https://doi.org/10.7567/SSDM.2018.B-5-05