A Study of Impact of Incorporating Locations of Yttrium on the Properties of GeO<sub>x</sub>/HfO<sub>2</sub>-based/TiN Gate Stack Based on Material Reaction

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[B-5-05] A Study of Impact of Incorporating Locations of Yttrium on the Properties of GeO_x/HfO₂-based/TiN Gate Stack Based on Material Reaction

^○C.H. Chou¹, Y.H. Lu¹, Y.H. Tsai¹, A.S. Shih¹, W.K. Yeh², C.H. Chien¹ (1.National Chiao Tung Univ. (Taiwan), 2.National Nano Device Labs. (Taiwan))