Integration of Low-k Low Temperature 400°C SiCO as Offset Spacer in view of 3D Sequential Integration

C. Fenouillet-Beranger

doi:https://doi.org/10.7567/SSDM.2018.B-6-02

3:45 PM - 4:00 PM

[B-6-02] Integration of Low-k Low Temperature 400°C SiCO as Offset Spacer in view of 3D Sequential Integration

^○C. Fenouillet-Beranger¹, L. Brunet¹, E. Arnoux¹, V. Lu¹, V. Beugin¹, C. Guerin¹, S. Del Medico², V. Loup¹, M.-P. Samson², B. Previtali¹, C. Tabone¹, N. Rambal¹, N. Rochat¹, D. Benoit², F. Allain¹, G. Romano¹, T. Artemisia¹, M. Casse¹, X. Garros¹, H. Dansas¹, A. Grenier¹, P. Batude¹, M. Vinet¹ (1.Inst. CEA/LETI (France), 2.Indus. STMicroelectronics (France))

https://doi.org/10.7567/SSDM.2018.B-6-02

2018 International Conference on Solid State Devices and Materials

[B-6-02] Integration of Low-k Low Temperature 400°C SiCO as Offset Spacer in view of 3D Sequential Integration