16:15 〜 16:30

[B-6-04] RTA-Temperature Dependence of Electrical Characteristics of PVD-TiN Metal Gate SOI-MOSFETs Fabricated on Half-Inch Minimal Wafers

^○Y. Liu¹ (1.AIST (Japan))

https://doi.org/10.7567/SSDM.2018.B-6-04