2:00 PM - 2:30 PM

[C-1-01 (Invited)] Gate-All-Around Transistors Based on Vertically Stacked Si Nanowires: Recent Progress in CMOS Integration and in Advanced Inline Metrology

^○H. Mertens¹, R. Ritzenthaler¹, D. Mocuta¹, N. Horiguchi¹ (1.IMEC (Belgium))

https://doi.org/10.7567/SSDM.2018.C-1-01