Investigation of Full Bias Space Degradation in Nanosheet nFETs with HfO<sub>2</sub> Gate Dielectric by 3D-KMC Method

W. Chen

doi:https://doi.org/10.7567/SSDM.2018.C-1-02

14:30 〜 14:45

[C-1-02] Investigation of Full Bias Space Degradation in Nanosheet nFETs with HfO₂ Gate Dielectric by 3D-KMC Method

^○W. Chen¹, L. Cai¹, Y. Li¹, K. Wang¹, X. Zhang^1,2, X. Liu¹, G. Du¹ (1.Inst. of Microelectronics, Peking Univ. (China), 2.National Key Lab. of Sci. and Tech. on Micro/Nano Fabrication (China))

https://doi.org/10.7567/SSDM.2018.C-1-02

2018 International Conference on Solid State Devices and Materials

[C-1-02] Investigation of Full Bias Space Degradation in Nanosheet nFETs with HfO2 Gate Dielectric by 3D-KMC Method

[C-1-02] Investigation of Full Bias Space Degradation in Nanosheet nFETs with HfO₂ Gate Dielectric by 3D-KMC Method