The Japan Society of Applied Physics

14:30 〜 14:45

[C-1-02] Investigation of Full Bias Space Degradation in Nanosheet nFETs with HfO2 Gate Dielectric by 3D-KMC Method

W. Chen1, L. Cai1, Y. Li1, K. Wang1, X. Zhang1,2, X. Liu1, G. Du1 (1.Inst. of Microelectronics, Peking Univ. (China), 2.National Key Lab. of Sci. and Tech. on Micro/Nano Fabrication (China))

https://doi.org/10.7567/SSDM.2018.C-1-02