9:30 AM - 9:45 AM
[C-3-02] Impact of pFET channel formation and patterning on the strain in SiGe nanosheets investigated by µRaman spectroscopy
○L. Gaben1,R. Berthelon2,1, F. Andrieu1, D. Rouchon1, D. Dutartre2, F. Roze2, M. Vinet1
(1.CEA LETI (France), 2.STMicrolectronics (France))
https://doi.org/10.7567/SSDM.2018.C-3-02