The Japan Society of Applied Physics

9:30 AM - 9:45 AM

[C-3-02] Impact of pFET channel formation and patterning on the strain in SiGe nanosheets investigated by µRaman spectroscopy

L. Gaben1,R. Berthelon2,1, F. Andrieu1, D. Rouchon1, D. Dutartre2, F. Roze2, M. Vinet1 (1.CEA LETI (France), 2.STMicrolectronics (France))

https://doi.org/10.7567/SSDM.2018.C-3-02