09:30 〜 09:45

[C-3-02] Impact of pFET channel formation and patterning on the strain in SiGe nanosheets investigated by µRaman spectroscopy

^○L. Gaben¹,R. Berthelon^2,1, F. Andrieu¹, D. Rouchon¹, D. Dutartre², F. Roze², M. Vinet¹ (1.CEA LETI (France), 2.STMicrolectronics (France))

https://doi.org/10.7567/SSDM.2018.C-3-02