The Japan Society of Applied Physics

9:45 AM - 10:00 AM

[C-3-03] Introducing a highly efficient stressor for pMOS devices by controlling epitaxy and Ge enrichment in advanced planar FDSOI CMOS technology

J. Kanyandekwe1, D. Barge2, P. Morin2, L. Grenouillet1, M. Labrot2, S. Maitrejean1, E. Augendre1, V. Lapras1, Y. Morand2, D. Dutartre2, M. Gros-Jean2, O. Gourhant2, C. Gaumer2, N. Rambal1, D. Cooper1, L. Clement2 (1.Cea-Leti (France), 2.STMicroelectronics (France))

https://doi.org/10.7567/SSDM.2018.C-3-03