09:45 〜 10:00
[C-3-03] Introducing a highly efficient stressor for pMOS devices by controlling epitaxy and Ge enrichment in advanced planar FDSOI CMOS technology
○J. Kanyandekwe1, D. Barge2, P. Morin2, L. Grenouillet1, M. Labrot2, S. Maitrejean1, E. Augendre1, V. Lapras1, Y. Morand2, D. Dutartre2, M. Gros-Jean2, O. Gourhant2, C. Gaumer2, N. Rambal1, D. Cooper1, L. Clement2
(1.Cea-Leti (France), 2.STMicroelectronics (France))
https://doi.org/10.7567/SSDM.2018.C-3-03