The Japan Society of Applied Physics

09:45 〜 10:00

[C-3-03] Introducing a highly efficient stressor for pMOS devices by controlling epitaxy and Ge enrichment in advanced planar FDSOI CMOS technology

J. Kanyandekwe1, D. Barge2, P. Morin2, L. Grenouillet1, M. Labrot2, S. Maitrejean1, E. Augendre1, V. Lapras1, Y. Morand2, D. Dutartre2, M. Gros-Jean2, O. Gourhant2, C. Gaumer2, N. Rambal1, D. Cooper1, L. Clement2 (1.Cea-Leti (France), 2.STMicroelectronics (France))

https://doi.org/10.7567/SSDM.2018.C-3-03