Introducing a highly efficient stressor for pMOS devices by controlling epitaxy and Ge enrichment in advanced planar FDSOI CMOS technology

J. Kanyandekwe

doi:https://doi.org/10.7567/SSDM.2018.C-3-03

09:45 〜 10:00

[C-3-03] Introducing a highly efficient stressor for pMOS devices by controlling epitaxy and Ge enrichment in advanced planar FDSOI CMOS technology

^○J. Kanyandekwe¹, D. Barge², P. Morin², L. Grenouillet¹, M. Labrot², S. Maitrejean¹, E. Augendre¹, V. Lapras¹, Y. Morand², D. Dutartre², M. Gros-Jean², O. Gourhant², C. Gaumer², N. Rambal¹, D. Cooper¹, L. Clement² (1.Cea-Leti (France), 2.STMicroelectronics (France))

https://doi.org/10.7567/SSDM.2018.C-3-03

2018 International Conference on Solid State Devices and Materials

[C-3-03] Introducing a highly efficient stressor for pMOS devices by controlling epitaxy and Ge enrichment in advanced planar FDSOI CMOS technology