Ge:B and GeSn:B Low Temperature Selective Epitaxial Growth Schemes for Source/Drain layers in Ge pMOS devices

A. Vohra

doi:https://doi.org/10.7567/SSDM.2018.C-3-05

10:15 〜 10:30

[C-3-05] Ge:B and GeSn:B Low Temperature Selective Epitaxial Growth Schemes for Source/Drain layers in Ge pMOS devices

A. Vohra^1,2, C. Porret², D. Kohen³, S. Folkersma^1,2, J. Bogdanowicz², M. Schaekers², J. Tolle³, A. Hikavyy², E. Capogreco², L. Witters², R. Langer², W. Vandervorst^1,2,^○R. Loo² (1.K.U. Leuven (Belgium), 2.Imec (Belgium), 3.ASM (United States Minor Outlying Islands))

https://doi.org/10.7567/SSDM.2018.C-3-05

2018 International Conference on Solid State Devices and Materials

[C-3-05] Ge:B and GeSn:B Low Temperature Selective Epitaxial Growth Schemes for Source/Drain layers in Ge pMOS devices