The Japan Society of Applied Physics

10:15 〜 10:30

[C-3-05] Ge:B and GeSn:B Low Temperature Selective Epitaxial Growth Schemes for Source/Drain layers in Ge pMOS devices

A. Vohra1,2, C. Porret2, D. Kohen3, S. Folkersma1,2, J. Bogdanowicz2, M. Schaekers2, J. Tolle3, A. Hikavyy2, E. Capogreco2, L. Witters2, R. Langer2, W. Vandervorst1,2,R. Loo2 (1.K.U. Leuven (Belgium), 2.Imec (Belgium), 3.ASM (United States Minor Outlying Islands))

https://doi.org/10.7567/SSDM.2018.C-3-05