A Novel Experimental Approach to Extracting Negative Capacitances: Newly found Negative DIBL Effect in 14nm NC-FinFET and the Way to Achieve Hysteresis-free

Y.C. Luo

doi:https://doi.org/10.7567/SSDM.2018.C-4-05

11:45 AM - 12:00 PM

[C-4-05 (Late News)] A Novel Experimental Approach to Extracting Negative Capacitances: Newly found Negative DIBL Effect in 14nm NC-FinFET and the Way to Achieve Hysteresis-free

Y.C. Luo¹,^○E.R. Hsieh², C.J. Su³, S. Chung², T.P. Chen⁴, S.A. Huang⁴, T.J. Chen⁴, O. Cheng⁴ (1.National Tsing Hua University (Taiwan), 2.National Chiao Tung University (Taiwan), 3.National NanoDevice Lab. (Taiwan), 4.UMC (Taiwan))

https://doi.org/10.7567/SSDM.2018.C-4-05

2018 International Conference on Solid State Devices and Materials

[C-4-05 (Late News)] A Novel Experimental Approach to Extracting Negative Capacitances: Newly found Negative DIBL Effect in 14nm NC-FinFET and the Way to Achieve Hysteresis-free