The Japan Society of Applied Physics

16:15 〜 16:30

[C-6-04] Investigation of Switching Characteristics for Silicon Doped Hafnium Oxide FeFET

T. Ali1, P. Polakowski1, S. Riedel1, T. Büttner1, T. Kämpfe1, M. Rudolph1, B. Pätzold1, D. Löhr1, R. Hoffmann1, M. Czernohorsky1, K. Kühnel1, P. Steinke1, K. Zimmermann1, K. Biedermann1, K. Seidel1, J. Müller1 (1.Fraunhofer Center Nanoelectronic Technologies (Germany))

https://doi.org/10.7567/SSDM.2018.C-6-04