The Japan Society of Applied Physics

4:15 PM - 4:30 PM

[C-6-04] Investigation of Switching Characteristics for Silicon Doped Hafnium Oxide FeFET

T. Ali1, P. Polakowski1, S. Riedel1, T. Büttner1, T. Kämpfe1, M. Rudolph1, B. Pätzold1, D. Löhr1, R. Hoffmann1, M. Czernohorsky1, K. Kühnel1, P. Steinke1, K. Zimmermann1, K. Biedermann1, K. Seidel1, J. Müller1 (1.Fraunhofer Center Nanoelectronic Technologies (Germany))

https://doi.org/10.7567/SSDM.2018.C-6-04