First Demonstration of Ferroelectric Lanthanum-Doped Hafnium Oxide for InGaAs Negative Capacitance MOSFET with Sub-60 mV/dec Subthreshold Swing

Q.H. Luc

doi:https://doi.org/10.7567/SSDM.2018.C-7-02

09:15 〜 09:30

[C-7-02] First Demonstration of Ferroelectric Lanthanum-Doped Hafnium Oxide for InGaAs Negative Capacitance MOSFET with Sub-60 mV/dec Subthreshold Swing

Q.H. Luc¹,^○K.Y. Zhang¹, C.C. Fan Chiang¹, Y.D. Jin¹, H.B. Do¹, M.T.H. Ha¹, S.H. Huynh¹, P. Huang¹, C.W. Hsu¹, S.P. Wang¹, Y.C. Lin¹, Y.E. Chang¹ (1.National Chiao Tung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2018.C-7-02

2018 International Conference on Solid State Devices and Materials

[C-7-02] First Demonstration of Ferroelectric Lanthanum-Doped Hafnium Oxide for InGaAs Negative Capacitance MOSFET with Sub-60 mV/dec Subthreshold Swing