10:00 AM - 10:15 AM [C-7-05] Electrical characteristic of La2O3/Si MOSFETs with ferroelectric-type hysteresis S. Takagi1,○K. Endo1, K. Kato1, M. Takenaka1 (1.Univ. of Tokyo (Japan)) https://doi.org/10.7567/SSDM.2018.C-7-05