10:30 〜 10:45

[C-7-07] Demonstration of Ge Complementary Tunneling Field-Effect Transistors with Dopant Segregation NiGe Source/Drain

^○J. Li¹, Y. Qu¹, S. Zeng¹, Y. Zhang¹, R. Cheng¹, R. Zhang¹, Y. Zhao¹ (1.Zhejiang Univ. (China))

https://doi.org/10.7567/SSDM.2018.C-7-07