In-situ Plasma Conditioning of InGaAs / High-κ Interface Layers for Defect Density Control Compatible with Scalable FinFET Integration

J. Rozen

doi:https://doi.org/10.7567/SSDM.2018.C-8-02

14:15 〜 14:30

[C-8-02] In-situ Plasma Conditioning of InGaAs / High-κ Interface Layers for Defect Density Control Compatible with Scalable FinFET Integration

^○J. Rozen¹, Y. Ogawa², M. Hatanaka², T. Ando¹, E. Cartier¹, M.M. Frank¹, M. Hopstaken¹, J. Bruley¹, K.-T. Lee¹, J.-B. Yau¹, Y. Sun¹, R.L. Bruce¹, C. D'Emic¹, X. Sun¹, K. Suu², R.T. Mo¹, E. Leobandung¹, V. Narayanan¹ (1.IBM Research (USA), 2.Ulvac, Inc. (Japan))

https://doi.org/10.7567/SSDM.2018.C-8-02

2018 International Conference on Solid State Devices and Materials

[C-8-02] In-situ Plasma Conditioning of InGaAs / High-κ Interface Layers for Defect Density Control Compatible with Scalable FinFET Integration