The Japan Society of Applied Physics

14:15 〜 14:30

[C-8-02] In-situ Plasma Conditioning of InGaAs / High-κ Interface Layers for Defect Density Control Compatible with Scalable FinFET Integration

J. Rozen1, Y. Ogawa2, M. Hatanaka2, T. Ando1, E. Cartier1, M.M. Frank1, M. Hopstaken1, J. Bruley1, K.-T. Lee1, J.-B. Yau1, Y. Sun1, R.L. Bruce1, C. D'Emic1, X. Sun1, K. Suu2, R.T. Mo1, E. Leobandung1, V. Narayanan1 (1.IBM Research (USA), 2.Ulvac, Inc. (Japan))

https://doi.org/10.7567/SSDM.2018.C-8-02