The Japan Society of Applied Physics

14:30 〜 14:45

[D-1-02] Effect of GaN Drift-Layer Thicknesses in Vertical Schottky Barrier Diodes on Free-Standing GaN Substrates

A. Sandupatla1, S. Arulkumaran2,3, G.I. Ng1,2, K. Ranjan1,2, M. Deki3, S. Nitta3, H. Amano3 (1.School of EEE, Nanyang Technological Univ. (Singapore), 2.Temasek Labs., Nanyang Technological Univ. (Singapore), 3.Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2018.D-1-02