Demonstration of High Channel Mobility and Low Trapped Electron Density of SiO<sub>2</sub>/SiC (0-33-8) Interfaces

4:15 PM - 4:30 PM

[D-2-03] Demonstration of High Channel Mobility and Low Trapped Electron Density of SiO₂/SiC (0-33-8) Interfaces

^○T. Masuda¹, T. Hatakeyama¹, S. Harada¹, H. Yano² (1.AIST (Japan), 2.Univ. of Tsukuba (Japan))