16:45 〜 17:00

[D-2-05] Significant Improvement of p-type 4H-SiC MOS Interface Characteristics by Low Temperature Post-Oxidation Annealing in H₂O + O₂ Ambient

^○J. Koyanagi¹, M. Nishida¹, K. Kita¹ (1.The University of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2018.D-2-05