The Japan Society of Applied Physics

11:15 〜 11:30

[D-4-02] Demonstration of beta-(AlGa)2O3 (010) metal-semiconductor field-effect transistors with high breakdown voltage over 900 V

H. Okumura1, Y. Kato2, T. Oshima2, T. Palacios3 (1.Univ. of Tsukuba (Japan), 2.Saga Univ. (Japan), 3.MIT (USA))

https://doi.org/10.7567/SSDM.2018.D-4-02