Demonstration of beta-(AlGa)<sub>2</sub>O<sub>3</sub> (010) metal-semiconductor field-effect transistors with high breakdown voltage over 900 V

11:15 〜 11:30

[D-4-02] Demonstration of beta-(AlGa)₂O₃ (010) metal-semiconductor field-effect transistors with high breakdown voltage over 900 V

^○H. Okumura¹, Y. Kato², T. Oshima², T. Palacios³ (1.Univ. of Tsukuba (Japan), 2.Saga Univ. (Japan), 3.MIT (USA))