11:45 〜 12:00

[D-4-04] Improved drain current of diamond metal-semiconductor FET by selectively grown P+ contact layer

^○H. Kawashima¹, H. Umezawa¹, S. Ohmagari¹ (1.AIST (Japan))

https://doi.org/10.7567/SSDM.2018.D-4-04