The Japan Society of Applied Physics

14:30 〜 14:45

[D-5-04] Low leakage current and High mobility Ultra-thin-body InGaSb p-FETs

R. IlPyo1,2, Kim SangHyeon2, H. JaeHoon2, G. Dae-Myeong2, K. Seong Kwang2, K. Sooseok2, K. Hang-Kyu2, L. Woo Chul2, K. Seong Keun2, H. Do Kyung2, S. Yun Heub1, S. Jindong2 (1.Univ. of Hanyang (Korea), 2.Korea Institute of Science and Technology (Korea))

https://doi.org/10.7567/SSDM.2018.D-5-04