Low leakage current and High mobility Ultra-thin-body InGaSb p-FETs

R. IlPyo

doi:https://doi.org/10.7567/SSDM.2018.D-5-04

2:30 PM - 2:45 PM

[D-5-04] Low leakage current and High mobility Ultra-thin-body InGaSb p-FETs

^○R. IlPyo^1,2, Kim SangHyeon², H. JaeHoon², G. Dae-Myeong², K. Seong Kwang², K. Sooseok², K. Hang-Kyu², L. Woo Chul², K. Seong Keun², H. Do Kyung², S. Yun Heub¹, S. Jindong² (1.Univ. of Hanyang (Korea), 2.Korea Institute of Science and Technology (Korea))

https://doi.org/10.7567/SSDM.2018.D-5-04

2018 International Conference on Solid State Devices and Materials

[D-5-04] Low leakage current and High mobility Ultra-thin-body InGaSb p-FETs