Recent Topics of Vertical GaN Power Devices - Trench MOS SBDs and Trench MOSFETs -

T. Oka

doi:https://doi.org/10.7567/SSDM.2018.D-7-01

09:00 〜 09:30

[D-7-01 (Invited)] Recent Topics of Vertical GaN Power Devices - Trench MOS SBDs and Trench MOSFETs -

^○T. Oka¹, T. Ina¹, Y. Ueno¹, N. Tanaka¹, J. Kurosaki¹, T. Suzuki¹, J. Nishii¹, K. Hasegawa¹, K. Yasunishi¹, G. Nishio¹, S. Murakami¹, N. Murakami¹ (1.TOYODA GOSEI Co., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2018.D-7-01

2018 International Conference on Solid State Devices and Materials

[D-7-01 (Invited)] Recent Topics of Vertical GaN Power Devices - Trench MOS SBDs and Trench MOSFETs -