10:00 AM - 10:15 AM

[D-7-04] A RESURF Structure with Nano-trenches and Fins for AlGaN/GaN Devices

^○A. Zhang¹, Q. Zhou¹, C. Yang¹, Y. Shi¹, W. Chen¹, Z. Li¹, B. Zhang¹ (1.Univ. of Electronic Sci. and Tech. of China (China))

https://doi.org/10.7567/SSDM.2018.D-7-04